Progress of Cryogenics and Isotopes Separation , ISSN: 1582-2575
2001, Volume 4, Issue 7+8

Romanian Made Semiconductor Diodes as Cryogenic Temperature Sensors

Abstract

We studied the temperature dependence of the BANEASA S.A. Bucharest 1N 4148 silicon diode forward tension in the range of 20 to 300 K. The characteristics show a linear dependence between forward tension of diode junction and temperature and a good sensivity, that makes this device suitable for temperature measurements between 20 and 300 K.