2001, Volume 4, Issue 7+8
Romanian Made Semiconductor Diodes as Cryogenic Temperature Sensors
National R&D Institute of Cryogenics and Isotopic Technologies – ICSI Rm. Valcea
*Corresponding author: Mariana Iliescu, e-mail: email@example.comPublished: October 2001
We studied the temperature dependence of the BANEASA S.A. Bucharest 1N 4148 silicon diode forward tension in the range of 20 to 300 K. The characteristics show a linear dependence between forward tension of diode junction and temperature and a good sensivity, that makes this device suitable for temperature measurements between 20 and 300 K.
Tag search -