Progress of Cryogenics and Isotopes Separation , ISSN: 1582-2575
2001, Volume 4, Issue 7+8

Romanian Made Semiconductor Diodes as Cryogenic Temperature Sensors

Mariana Iliescu * , Mihai Culcer

National R&D Institute of Cryogenics and Isotopic Technologies – ICSI Rm. Valcea

*Corresponding author: Mariana Iliescu, e-mail:

Published: October 2001


We studied the temperature dependence of the BANEASA S.A. Bucharest 1N 4148 silicon diode forward tension in the range of 20 to 300 K. The characteristics show a linear dependence between forward tension of diode junction and temperature and a good sensivity, that makes this device suitable for temperature measurements between 20 and 300 K.



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